Eiji higurashi surface activated bonding

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August undefined, 2024

WebThe surface activated bonding (SAB) technique enables room temperature bonding of metals, such as Au, by forming metal bonds between clean and reactive surfaces. WebEiji Higurashi, Yuta Sasaki, Ryuji Kurayama, Tadatomo Suga, Yasuo Doi, Yoshihiro Sawayama, Iwao Hosako. ... This paper reports the mechanical and electrical …

Au–Au Surface-Activated Bonding and Its Application to Optical ...

WebEiji HOASHI Cited by 325 of Osaka University, Osaka (Handai) Read 43 publications Contact Eiji HOASHI WebSurface- activated bonding (SAB) is a promising alternative approach to the conventional bonding methods. SAB is a room temperature bonding method and has been demonstrated for a variety of semiconductor materials such as Si/Si,5) country house hotels in the highlands

Low-temperature direct bonding of InP and diamond …

WebJan 25, 2024 · Direct bonding of GaN-Si surfaces was strongly formed at 125 °C by plasma activation. • Bonded sample was fractured in GaN instead of interface during strength measurement. • Oxynitride film formed by plasma supposedly promoted the interfacial adhesion. • GaN and Si were bonded with a 3-nm-thick amorphous layer consisting of Si, … Webtemperature bonding for advanced optoelectronic devices To cite this article: Eiji Higurashi 2024 Jpn. J. Appl. Phys. 57 04FA02 View the article online for updates and … WebOct 25, 2024 · Eiji Higurashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already … breville the easy mist humidifier lah300wht

Tensile strength versus bonding temperature. - ResearchGate

Eiji HAYASHI Manager PhD JSR, Tokyo - ResearchGate

WebMar 1, 2016 · Eiji Higurashi; Tadatomo Suga; ... Au-Au surface-activated bonding was carried out at 150$^{\circ}{\rm C}$ in ambient air after surface activation by an Ar radio-frequency plasma. The GaN/Si ... WebJan 1, 2008 · Eiji Higurashi; Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. ... The surface activated bonding (SAB) technique enables room temperature ... breville the eggspert 4 up egg cookerWebEiji HIGURASHI, Ken OKUMURA, Yutaka KUNIMUNE, Tadatomo SUGA, Kei HAGIWARA. Author information Keywords: heterogeneous integration, room ... heterogeneous … country house hotels kent

"WebIn this study, a GaN/LiNbO 3 hybrid wafer was demonstrated using roomerature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO 3 wafers. " - Eiji higurashi surface activated bonding

Eiji higurashi surface activated bonding

Heterogeneous GaN-Si integration via plasma activation direct bonding ...

WebFeb 13, 2024 · Au⁻Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O₂ plasma for pretreatment was investigated for … WebJan 16, 2024 · Demonstration of GaN/LiNbO3 Hybrid Wafer Using Room-Temperature Surface Activated Bonding. ECS Journal of Solid State Science and Technology. 2024-04-23 Journal article. DOI: 10.1149/2162-8777/ab8369. Contributors : Ryo Takigawa; Takashi Matsumae; Michitaka Yamamoto; Eiji Higurashi; Tanemasa Asano; Haruichi Kanaya.

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WebRoom-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method Eiji HIGURASHI , Ken OKUMURA , Yutaka KUNIMUNE , Tadatomo SUGA , Kei HAGIWARA Author information Keywords: heterogeneous integration , room-temperature bonding , surface-activated bonding , … WebRoom-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method Eiji HIGURASHI†a), Member, Ken OKUMURA†, …

WebJan 25, 2024 · Low-temperature bonding of wafers has been studied utilizing reactive ion etching-mode plasma activation. The hydrophilic Si and thermally oxidized Si wafers were exposed to N 2 , Ar, or O 2 plasma… Expand 265 Pulsed laser deposition of hexagonal GaN-on-Si (100) template for MOCVD applications. K. Shen, Ming-Chien Jiang, +4 … WebJun 26, 2009 · Hybrid integration of multiple optical chips in three dimensions is an important technology for realizing highly functional, compact optoelectronic microsystems. In this …

WebJul 28, 2024 · E. Higurashi Engineering Japanese Journal of Applied Physics 2024 Wafer-scale hermetic sealing in air and vacuum was achieved by using Au–Au surface activated bonding (SAB) and sputtered ultrathin Au films (thickness: 15 nm). Because such films with small grains… Expand 4 WebEiji HAYASHI, Manager Cited by 96 of JSR, Tokyo Read 25 publications Contact Eiji HAYASHI

WebMay 24, 2024 · The bonded wafer was successfully cut into 0.5 × 0.5 mm 2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m 2 using the crack opening method.

WebJan 1, 2007 · Eiji Higurashi Tohoku University Tadatomo Suga Meisei University Satoshi Shinada A lithium niobate (LiNbO 3 )/silicon (Si) hybrid structure has been developed by the surface-activated... country house hotels in wales ukWebJan 22, 2015 · Surface-activated bonding (SAB) is a promising alternative approach to the conventional bonding methods. SAB is a room temperature bonding method and has … country house hotels lincolnWebFeb 18, 2024 · A modified surface-activated bonding method achieved fabrication of a thin-film LNOI/Si hybrid wafer. This low-temperature bonding method at 100 °C showed a strong bond between the LN and SiO 2 layers, which is sufficient to withstand the wafer thinning to a LN thickness of approximately 5 μm using conventional mechanical polishing. country house hotels in south walesWebFeb 18, 2024 · A modified surface-activated bonding method achieved fabrication of a thin-film LNOI/Si hybrid wafer. This low-temperature bonding method at 100 °C showed a strong bond between the LN and SiO 2 layers, which is sufficient to withstand the wafer thinning to a LN thickness of approximately 5 μm using conventional mechanical polishing. country house hotels in west sussexWebEiji Higurashi. Tohoku University. Verified email at tohoku.ac.jp ... Au–Au surface-activated bonding and its application to optical microsensors with 3-D structure. E … country house hotels london areaWebEiji Higurashi Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film... country house hotels in ukWebMar 1, 2016 · Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact... country house hotels leamington spa